Leuven, Belgium

Laurent Breuil


 

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 10(Granted Patents)


Company Filing History:


Years Active: 2008-2014

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4 patents (USPTO):Explore Patents

Title: The Innovations of Laurent Breuil

Introduction

Laurent Breuil is a notable inventor based in Leuven, Belgium. He has made significant contributions to the field of nonvolatile memory technology, holding a total of 4 patents. His work focuses on enhancing the efficiency and effectiveness of memory elements used in various electronic devices.

Latest Patents

Among his latest patents is a nonvolatile memory element and production method, which presents innovative solutions for memory element arrangements. This nonvolatile memory element features a changeover material along with first and second electrically conductive electrodes. To minimize the forming voltage, the first electrode incorporates a field amplifier structure that amplifies the electric field strength generated by the second electrode within the changeover material. The field amplifier structure is designed as a projection of the electrodes that extends into the changeover material. Additionally, the memory element arrangement consists of multiple nonvolatile memory elements organized in a matrix format, allowing for addressing through bit lines in column form and word lines in row form.

Career Highlights

Laurent Breuil has worked with prominent companies in the technology sector, including Infineon Technologies AG and Imec VZW. His experience in these organizations has contributed to his expertise in memory technology and innovation.

Collaborations

Throughout his career, Laurent has collaborated with esteemed colleagues such as Franz Schuler and Georg Tempel. These partnerships have further enriched his work and advancements in the field.

Conclusion

Laurent Breuil's contributions to nonvolatile memory technology demonstrate his innovative spirit and dedication to advancing electronic memory solutions. His patents reflect a commitment to improving the efficiency of memory elements, making a lasting impact in the industry.

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