Location History:
- La Tranche, FR (2006)
- Grenoble, FR (2010 - 2012)
Company Filing History:
Years Active: 2006-2012
Title: Laurence Boissonnet: Innovator in Integrated Circuit Technology
Introduction
Laurence Boissonnet is a prominent inventor based in Grenoble, France. She has made significant contributions to the field of integrated circuits, holding a total of 3 patents. Her work focuses on the development of advanced bipolar transistors, which are crucial for modern electronic devices.
Latest Patents
Among her latest patents is an innovative integrated circuit that comprises a gradually doped bipolar transistor and a corresponding fabrication process. This integrated circuit features a bipolar transistor that includes a substrate and a collector formed within the substrate. The collector is designed with a highly doped lateral zone, a very lightly doped central zone, and a lightly doped intermediate zone located between the central and lateral zones of the collector. Additionally, the substrate contains a lightly doped lateral zone and a highly doped central zone, with the dopant species in the substrate's zone being electrically inactive.
Career Highlights
Laurence Boissonnet is currently employed at STMicroelectronics S.A., where she continues to push the boundaries of integrated circuit technology. Her expertise and innovative approach have positioned her as a key player in her field.
Collaborations
Throughout her career, Laurence has collaborated with notable colleagues, including Damien Lenoble and Thierry Schwartzmann. These partnerships have fostered a creative environment that enhances the development of cutting-edge technologies.
Conclusion
Laurence Boissonnet's contributions to integrated circuit technology exemplify her dedication to innovation and excellence. Her patents reflect her expertise and commitment to advancing the field, making her a significant figure in the world of electronics.