The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2006
Filed:
Oct. 26, 2001
Laurence Boissonnet, La Tranche, FR;
Dominique Golanski, Grenoble, FR;
Bruno Rauber, Goncelin, FR;
Andre Granier, Barraux, FR;
Laurence Boissonnet, La Tranche, FR;
Dominique Golanski, Grenoble, FR;
Bruno Rauber, Goncelin, FR;
Andre Granier, Barraux, FR;
STMicroelectronics, S.A., Montrouge, FR;
Abstract
A method of simultaneously fabricating a pair of insulated gate transistors respectively having a thin oxide and a thick oxide, and an integrated circuit including a pair of transistors of this kind. Forming low-doped NLDD areas of the thin oxide second transistor includes implanting a first dopant having a first concentration and implanting a second dopant having a second concentration lower than the first concentration. Forming low-doped areas NLDD of the first, thick oxide transistor includes only said implantation of the second dopant.