This inventor holds 1 USPTO granted patent. Top assignee: Other. Active years: 2011.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2011
Title: The Innovative Contributions of Laurant Georges Gosset
Introduction
Laurant Georges Gosset is an accomplished inventor based in Grenoble, France. With a keen focus on advancements in integrated-circuit technology, he has made significant contributions to the field through his innovative patent. His work exemplifies the essence of modern engineering and the importance of addressing challenges in semiconductor design.
Latest Patents
Gosset holds a patent for a groundbreaking invention titled “CuSiN/SiN diffusion barrier for copper in integrated-circuit devices.” This innovation pertains to an integrated-circuit device featuring a Copper-containing component situated within a dielectric layer. The inventive diffusion-barrier layer stack comprises a CuSiN layer followed by a SiN layer, creating a robust barrier that effectively suppresses Copper diffusion into the surrounding dielectric layer. This strategic layer combination not only enhances the reliability of the device during operation but also improves the lifetime of integrated-circuit devices when compared to prior art solutions.
Career Highlights
Gosset's career is marked by a commitment to enhancing the performance and reliability of electronic devices. By focusing on diffusion barriers in semiconductor technology, he has successfully developed solutions that tackle critical challenges in the field. His patent is a testament to his innovative approach and technical expertise.
Collaborations
Throughout his journey, Laurant has collaborated with notable colleagues, including Nicolas Jourdan and Joaquin Torres. Their collective efforts demonstrate the power of teamwork in advancing technological innovations and further validating the importance of collaboration in the realm of research and development.
Conclusion
Laurant Georges Gosset stands out as a prominent inventor whose work in integrated-circuit technology continues to pave the way for improved device performance. His patent for the CuSiN/SiN diffusion barrier illustrates his dedication to innovation and the ongoing evolution of semiconductor technology. As the industry progresses, contributions like those of Gosset are essential in addressing the increasing demands for efficiency and reliability in electronic devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile