San Giovanni La Punta, Italy

Laura Letizia Scalia

This inventor holds 1 USPTO granted patent and 7 published patent applications and 1 EPO patent. Top assignee: Stmicroelectronics S.r.l.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Laura Letizia Scalia. Retrieved from https://idiyas.com/inventor/laura-letizia-scalia

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

% Patents Active = 100.0

 

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Laura Letizia Scalia: Innovator in Power Electronics

Introduction

Laura Letizia Scalia is an inventor based in San Giovanni La Punta, Italy. She has made significant contributions to the field of power electronics, focusing on innovative methods for manufacturing electronic devices. Although she currently holds no granted patents, her work is noteworthy for its technical depth and potential applications.

Latest Patent Applications

Laura Letizia Scalia's latest patent applications include:

1. **POWER MOSFET PROVIDED WITH A VARIABLE TRANSPARENCY EDGE RING FORMED BY A HIGH-DEPTH AUTO-ALIGNED IMPLANT** - This application describes a method for manufacturing an electronic device. The method involves arranging a semiconductor body of N-type with a lattice structure that exhibits spatial symmetry. It also includes forming a damaged region within the semiconductor body, which has an amorphous lattice structure or lacks spatial symmetry. Additionally, it details the formation of a P-type edge termination region through a channelized implant of P-type doping species.

2. **PROCESS FOR MANUFACTURING A POWER ELECTRONIC DEVICE HAVING A CURRENT SPREADING LAYER** - This application outlines a process for creating a power electronic device. It involves forming a silicon carbide semiconductor body with a defined front surface and a Current Spreading Layer (CSL) that has a higher doping value than the base semiconductor. The process includes the formation of elementary cells in the active area of the semiconductor body at the front surface through channeled ion implantation.

Conclusion

Laura Letizia Scalia is an innovative inventor whose work in power electronics showcases her expertise and potential in the field. Her latest patent applications reflect her commitment to advancing technology in electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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