Klein Meckelsen, Germany

Lars Lottermoser


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 1995

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1 patent (USPTO):Explore Patents

Title: Innovations of Lars Lottermoser in Electrical Conductivity

Introduction

Lars Lottermoser is a notable inventor based in Klein Meckelsen, Germany. He has made significant contributions to the field of electrical conductivity through his innovative processes. His work primarily focuses on the deposition of metal-containing layers that exhibit high specific electrical conductivity.

Latest Patents

Lars Lottermoser holds a patent for a process that involves the deposition of metal-containing layers with high specific electrical conductivity. This process utilizes the decomposition of organometallic compounds in a hydrogen-containing gas or vapor phase through plasma technology. The optimization of the energy density of the plasma is achieved by recording an Optical Emission Spectroscopy (OES) spectrum. This innovative method allows for the production of strongly adhering conductor tracks with widths less than 50 micrometers and a height-to-width ratio greater than 1. Additionally, the patent describes a method for optimizing the deposition process and a composite body that includes a polymer substrate with a metal layer deposited on it.

Career Highlights

Lars Lottermoser is associated with Solvay Deutschland GmbH, where he applies his expertise in developing advanced materials and processes. His work has contributed to the advancement of technologies that require high-performance electrical conductivity.

Collaborations

Lars has collaborated with notable colleagues such as Andreas Hamerich and Joerg Mueller, enhancing the innovative capabilities within his team.

Conclusion

Lars Lottermoser's contributions to the field of electrical conductivity through his patented processes demonstrate his commitment to innovation. His work continues to influence advancements in material science and engineering.

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