Delft, Netherlands

Lars Johannes Bannenberg

This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Delft University of Technoloty. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Lars Johannes Bannenberg. Retrieved from https://idiyas.com/inventor/lars-johannes-bannenberg

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

 

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Lars Johannes Bannenberg: Innovator in Hydrogen Sensing Technology.

Introduction

Lars Johannes Bannenberg is a notable inventor based in Delft, Netherlands. He has made significant contributions to the field of hydrogen sensing technology. His innovative work focuses on developing advanced materials and devices for detecting hydrogen.

Latest Patents

Bannenberg holds a patent for an "Optical thin-film hydrogen sensing material based on tantalum or other group V element alloy." This invention relates to a tuneable hydrogen sensing device, a method for producing the thin-film device, and its applications in detecting chemical species. The patent also encompasses a sensor, such as a hydrogen sensor, and an apparatus for detecting hydrogen.

Career Highlights

Bannenberg is affiliated with the Technische Universiteit Delft, where he engages in research and development in the field of sensor technology. His work has contributed to advancements in the detection of hydrogen, which is crucial for various applications, including safety and energy.

Collaborations

Bannenberg has collaborated with notable colleagues, including Herman Schreuders. Their joint efforts have furthered research in hydrogen sensing technologies.

Conclusion

Lars Johannes Bannenberg is a pioneering inventor whose work in hydrogen sensing technology has the potential to impact various industries. His contributions to the field are significant and continue to inspire future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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