Company Filing History:
Years Active: 1988-1990
Title: Larry O Ragle: Innovator in Semiconductor Technology
Introduction
Larry O Ragle is a prominent inventor based in Palo Alto, California. He has made significant contributions to the field of semiconductor technology, holding three patents that showcase his innovative approach to laser and switch design.
Latest Patents
One of Ragle's latest patents is the Bulk Avalanche Semiconductor Laser. This invention utilizes optically triggered avalanche conduction to initiate lasing action in a bulk semiconductor. The design features a semiconductor block with electrodes on opposing sides, where a high voltage is applied that is less than the voltage required for avalanche breakdown. When irradiated with light, charge carriers are produced, leading to avalanche conduction and resulting in laser emission.
Another notable patent is the Bulk Avalanche Semiconductor Switch Using a Mesa Structure. This switch employs an improved method of optically-triggered avalanche breakdown, capable of producing pulses of 100 picoseconds or longer. It can deliver five kilovolts into 50 ohms using a standard laser diode. The design includes a semiconductor block with contacts on opposing sides, where a high voltage is applied. The mesa structure allows for field compression, generating an avalanche breakdown field across the semiconductor block.
Career Highlights
Larry O Ragle is currently associated with Power Spectra, Inc., where he continues to develop innovative technologies in the semiconductor field. His work has significantly advanced the understanding and application of semiconductor devices.
Collaborations
Ragle has collaborated with notable colleagues, including Stephen J Davis and Richard A Williams, contributing to various projects and innovations in semiconductor technology.
Conclusion
Larry O Ragle's contributions to semiconductor technology through his patents and work at Power Spectra, Inc. highlight his role as a leading inventor in the field. His innovative designs continue to influence the development of advanced semiconductor devices.