Jinhua, China

Lanlan Ma

This inventor holds 1 USPTO granted patent and 1 published patent application and 2 EPO patents. Top assignee: Hengdian Group Dmegc Magnetics Co., Ltd. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Lanlan Ma. Retrieved from https://idiyas.com/inventor/lanlan-ma

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Lanlan Ma and Solar Cell Innovation.

Introduction

Lanlan Ma is an inventor associated with Jinhua, China, and Hengdian Group DMEGC Magnetics Co., Ltd. Her patent work includes a solar-cell design and a method for preparing it.

Latest Patents

Ma is named on 1 patent: “Solar Cell and Preparation Method Thereof.” The invention describes a semiconductor substrate with hole- and electron-transport layers on one surface. The hole-transport layer includes vanadium oxide, while the electron-transport layer includes titanium oxide. First and second passivation layers are arranged to cover specified surfaces of the layers and substrate. The patent also provides a method for preparing the solar cell.

Career Highlights

Ma’s documented patent contribution focuses on solar-cell structure and fabrication. The design combines different transport-layer materials with passivation layers, addressing the construction of the cell and its preparation.

Collaborations

The provided information lists Chaoyan Fang and Gangfeng Huang as Ma’s coworkers. It does not specify their roles in the patent or whether they collaborated with her on this invention.

Conclusion

Lanlan Ma’s recorded patent work centers on a solar cell that combines vanadium oxide and titanium oxide transport layers with a layered passivation structure.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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