Sacramento, CA, United States of America

Lang Nhu Dinh

This inventor holds 1 USPTO granted patent. Top assignee: Seagate Technology Incorporated. Active years: 2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Lang Nhu Dinh. Retrieved from https://idiyas.com/inventor/lang-nhu-dinh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2014

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1 patent (USPTO):Explore Patents

Title: Lang Nhu Dinh: Innovator in Carbon-Deuterium Protective Overcoat Technology

Introduction

Lang Nhu Dinh is a notable inventor based in Sacramento, CA. He has made significant contributions to the field of materials science, particularly in the development of protective overcoat layers for substrates.

Latest Patents

Lang Nhu Dinh holds a patent for a "Carbon-deuterium protective overcoat layer." This invention involves a substrate that features a carbon-deuterium protective overcoat layer, which is crucial for enhancing the durability and performance of magnetic recording structures. The protective overcoat layer is composed of carbon-carbon (C-C) and carbon-deuterium (C-D) bonds, intentionally excluding carbon-hydrogen (C-H) bonds.

Career Highlights

Lang Nhu Dinh is currently employed at Seagate Technology Incorporated, a leading company in data storage solutions. His work focuses on innovative materials that improve the reliability of storage devices.

Collaborations

He collaborates with talented coworkers, including Paul Max Jones and Christopher Loren Platt, who contribute to the advancement of technology in their respective fields.

Conclusion

Lang Nhu Dinh's work in developing carbon-deuterium protective overcoat layers represents a significant advancement in materials science, showcasing his innovative spirit and dedication to improving technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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