Bengaluru, India

Lakshmikantha Holla Vakwadi


Average Co-Inventor Count = 3.4

ph-index = 3

Forward Citations = 21(Granted Patents)


Company Filing History:


Years Active: 2015-2018

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4 patents (USPTO):Explore Patents

Title: Innovations by Lakshmikantha Holla Vakwadi

Introduction

Lakshmikantha Holla Vakwadi is a notable inventor based in Bengaluru, India. He has made significant contributions to the field of memory technology, holding a total of 4 patents. His work primarily focuses on enhancing the performance and efficiency of memory systems.

Latest Patents

Among his latest patents is the "Boost charge recycle for low-power memory." This invention features a negative bit line boost circuit designed to control a write multiplexer and a write assist transistor. The circuit allows charge from a boost capacitor to positively charge a bit line following a write assist period. Another significant patent is the "Architecture to improve write-ability in SRAM." This invention discloses a memory and apparatus that includes a memory core with multiple memory cells. It features a first write assist circuit to aid writing to a first group of memory cells and a second write assist circuit for a second group, enhancing the overall write capability of the memory system.

Career Highlights

Lakshmikantha currently works at Qualcomm Incorporated, a leading company in the technology sector. His role involves developing innovative solutions that push the boundaries of memory technology. His expertise and contributions have positioned him as a valuable asset in his field.

Collaborations

He collaborates with talented individuals such as Sharad Kumar Gupta and Chirag Gulati. Their teamwork fosters an environment of innovation and creativity, leading to groundbreaking advancements in memory technology.

Conclusion

Lakshmikantha Holla Vakwadi's contributions to memory technology through his patents and work at Qualcomm Incorporated highlight his role as a significant inventor in the industry. His innovative solutions continue to shape the future of memory systems.

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