Tsukuba, Japan

Lai Na Ma

This inventor holds 1 USPTO granted patent. Top assignee: National Institute of Advanced Industrial Science and Technology. Active years: 2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Lai Na Ma. Retrieved from https://idiyas.com/inventor/lai-na-ma

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2017

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1 patent (USPTO):Explore Patents

Title: Innovations by Lai Na Ma in Semiconductor Manufacturing

Introduction

Lai Na Ma is a prominent inventor based in Tsukuba, Japan. She has made significant contributions to the field of semiconductor manufacturing. Her innovative work has led to the development of a patented method that enhances the efficiency of semiconductor devices.

Latest Patents

Lai Na Ma holds a patent for a "Method of manufacturing semiconductor device and semiconductor device manufacturing apparatus." This invention outlines a novel approach to the manufacturing process, which is crucial for advancing semiconductor technology. She has 1 patent to her name, showcasing her expertise in this specialized area.

Career Highlights

Lai Na Ma is affiliated with the National Institute of Advanced Industrial Science and Technology. This institution is renowned for its cutting-edge research and development in various scientific fields. Her role there has allowed her to focus on innovative solutions in semiconductor technology.

Collaborations

Lai Na Ma has worked alongside notable colleagues, including Masahiro Aoyagi and Thanh Tung Bui. These collaborations have fostered a dynamic environment for research and innovation, contributing to the advancement of semiconductor manufacturing techniques.

Conclusion

Lai Na Ma's contributions to semiconductor manufacturing exemplify her dedication to innovation and research. Her patented methods are paving the way for future advancements in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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