Suwon, South Korea

Kyungjun Shin

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kyungjun Shin. Retrieved from https://idiyas.com/inventor/kyungjun-shin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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% Patents Active = 100.0

Average Co-Inventor Count = 5.0

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Company Filing History:


Years Active: 2022

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1 patent (USPTO):Explore Patents

Title: Innovations of Kyungjun Shin in Vertical Memory Devices

Introduction

Kyungjun Shin is a notable inventor based in Suwon-si, South Korea. He has made significant contributions to the field of memory devices, particularly in the development of vertical memory technologies. His innovative work has led to the filing of a patent that showcases his expertise and creativity in this area.

Latest Patents

Kyungjun Shin holds a patent for "Vertical memory devices with reduced gate electrode coupling and methods of manufacturing the same." This patent describes a vertical memory device that includes a plurality of gate electrodes and insulation patterns, along with a channel that penetrates a first gate electrode and a first insulation pattern. The device features a charge storage structure that consists of a tunnel insulation pattern, a charge trapping pattern, and a blocking pattern, all of which are sequentially stacked from the outer sidewall of the channel. Additionally, the device incorporates a buried pattern structure surrounded by the tunnel insulation pattern and the charge trapping pattern. Notably, the charge trapping pattern includes a first vertically sloped portion and a second vertically sloped portion, with varying thicknesses in the horizontal direction.

Career Highlights

Kyungjun Shin is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to be at the forefront of innovation in memory device technology. His contributions have not only advanced the company's research but have also set new standards in the industry.

Collaborations

Throughout his career, Kyungjun Shin has collaborated with talented individuals such as Hyunseok Na and Yunkyu Jung. These collaborations have fostered a creative environment that encourages the exchange of ideas and the development of groundbreaking technologies.

Conclusion

Kyungjun Shin's work in vertical memory devices exemplifies the innovative spirit of modern technology. His patent and contributions to Samsung Electronics Co., Ltd. highlight his role as a key player in the advancement of memory technology. His achievements continue to inspire future innovations in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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