Company Filing History:
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Years Active: 1996-2015
Title: The Innovations of Kyung Dong Yoo
Introduction
Kyung Dong Yoo is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in image sensors and transistor gate oxide films. With a total of 6 patents to his name, Yoo's work has had a substantial impact on the industry.
Latest Patents
One of his latest patents is an image sensor that features an anti-reflective layer and a unique fabricating method. This image sensor includes a pixel layer with both an active pixel array and an optical black pixel array. It incorporates a first anti-reflective layer made of a hafnium oxide layer with high transmittance over the active pixel array, and a second anti-reflective layer with a hafnium oxide layer of low transmittance over the optical black pixel array. Another notable patent is a method for inhibiting the degradation of a transistor gate oxide film. This method involves the implantation of impurities on the surface of an oxide film after the formation of a gate electrode. This process alters the surface characteristics of the oxide film to scatter ultraviolet rays, which are known to degrade the gate insulating film.
Career Highlights
Kyung Dong Yoo has worked with leading companies in the semiconductor industry, including Hynix Semiconductor Inc. and Hyundai Electronics Industries Co. Ltd. His experience in these organizations has allowed him to develop innovative solutions that address critical challenges in semiconductor technology.
Collaborations
Yoo has collaborated with notable colleagues such as Sung Chun Cho and Do Hwan Kim. These partnerships have contributed to the advancement of his research and the successful development of his patents.
Conclusion
Kyung Dong Yoo's contributions to the field of semiconductor technology are noteworthy. His innovative patents and collaborations with industry leaders highlight his role as a significant inventor in the field. His work continues to influence advancements in image sensors and transistor technology.