The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2006
Filed:
Dec. 05, 2005
Applicant:
Kyung Dong Yoo, Seoul, KR;
Inventor:
Kyung Dong Yoo, Seoul, KR;
Assignee:
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of inhibiting degradation of a transistor gate oxide film by high density plasma is disclosed. After a gate electrode is formed, impurity is implanted on the surface of an oxide film, thereby changing surface characteristics of the oxide film to scatter ultraviolet rays which are factors of degradation of the gate insulating film. Accordingly, the ultraviolet rays are prevented from being permeated into a gate insulating oxide film.