Suwon, South Korea

Kyudong Park

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kyudong Park. Retrieved from https://idiyas.com/inventor/kyudong-park

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Kyudong Park and Semiconductor Device Innovation.

Introduction

Kyudong Park is an inventor associated with Suwon, South Korea, and Samsung Electronics Co., Ltd. His patent work concerns semiconductor device architecture and the integration of selector materials into a layered structure.

Latest Patents

Park is credited with 1 patent, titled “Semiconductor device.” The invention describes a stack of alternating horizontal conductive and interlayer insulating layers, together with pillar-shaped vertical conductive layers. Chalcogenide selector layers surround the vertical conductors, while isolation layers divide the horizontal conductive layers and extend between adjacent vertical conductors. The isolation layers’ ends contact the selector layers’ external surfaces.

Career Highlights

Park’s listed patent reflects work on semiconductor structures that combine conductive layers, insulation, selector materials, and isolation features. The supplied information identifies Samsung Electronics Co., Ltd. as his company.

Collaborations

Hodae Kim is identified as Park’s coworker. The available information does not specify their roles or the nature of any joint work.

Conclusion

Kyudong Park’s recorded invention focuses on a layered semiconductor device with chalcogenide selector layers and carefully arranged isolation features, representing his contribution to semiconductor innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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