Hwaseong-si, South Korea

Kyoungeun Lee

USPTO Granted Patents = 4 

Average Co-Inventor Count = 2.9

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2019-2025

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4 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Kyoungeun Lee

Introduction

Kyoungeun Lee is a prominent inventor based in Hwaseong-si, South Korea. He has made significant contributions to the field of storage devices, holding a total of 4 patents. His work focuses on enhancing the efficiency and functionality of memory devices, which are crucial in today's technology-driven world.

Latest Patents

Kyoungeun Lee's latest patents include a groundbreaking storage device featuring an eye open monitoring (EOM) circuit. This innovative device comprises a non-volatile memory device with multiple memory regions, each capable of inputting and outputting data signals. The memory controller is equipped with an EOM circuit that generates and compares EOM information to optimize the performance of the memory die. Additionally, he has developed methods for writing and reading data in storage devices using sensor information, which significantly improves data management and storage efficiency.

Career Highlights

Kyoungeun Lee is currently employed at Samsung Electronics Co., Ltd., a leading global technology company. His role involves researching and developing advanced storage solutions that cater to the evolving needs of consumers and businesses alike. His expertise in memory technology has positioned him as a key player in the industry.

Collaborations

Throughout his career, Kyoungeun Lee has collaborated with talented individuals such as Hyunjoon Yoo and Seunghan Lee. These partnerships have fostered a creative environment that encourages innovation and the development of cutting-edge technologies.

Conclusion

Kyoungeun Lee's contributions to the field of storage devices exemplify the spirit of innovation. His patents and ongoing work at Samsung Electronics Co., Ltd. continue to shape the future of memory technology.

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