Seongnam, South Korea

Kyoung-Sik Yoon

This inventor holds 8 USPTO granted patents and 1 published patent application and 1 EPO patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2007-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kyoung-Sik Yoon. Retrieved from https://idiyas.com/inventor/kyoung-sik-yoon

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 8 

% Patents Active = 100.0

 

Average Co-Inventor Count = 6.5

ph-index = 5

Forward Citations = 272(Granted Patents)


Location History:

  • Seoul, KR (2007 - 2014)
  • Seongnam-si, KR (2010 - 2015)

Company Filing History:


Years Active: 2007-2015

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8 patents (USPTO):Explore Patents

Title: The Innovative Journey of Inventor Kyoung-Sik Yoon

Introduction:

Kyoung-Sik Yoon is a visionary inventor hailing from Seongnam-si, South Korea. With a passion for pushing the boundaries of technology, he has made significant contributions to the field of innovation.

Latest Patents:

Kyoung-Sik Yoon holds several patents in various technological domains, showcasing his versatility and creativity in inventing cutting-edge solutions for modern challenges.

Career Highlights:

Throughout his illustrious career, Kyoung-Sik Yoon has been at the forefront of technological advancements. His innovative spirit has led to the development of groundbreaking inventions that have revolutionized industries.

Collaborations:

Kyoung-Sik Yoon has collaborated with leading research institutions, universities, and companies to bring his inventions to life. His ability to work in multidisciplinary teams has resulted in the successful implementation of his visionary ideas.

Conclusion:

Inventor Kyoung-Sik Yoon's relentless pursuit of innovation and his commitment to pushing the boundaries of technology make him a true trailblazer in the world of inventions. His contributions continue to inspire future generations of inventors and innovators.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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