Kyoung-Eun Uhn

Title: Kyoung-Eun Uhn: Innovator in Nonvolatile Memory Technology

Introduction

Kyoung-Eun Uhn is a prominent inventor based in Incheon, South Korea. He is known for his contributions to the field of nonvolatile memory devices. His innovative work has led to the development of advanced technologies that enhance data storage solutions.

Latest Patents

Kyoung-Eun Uhn holds a patent for a nonvolatile memory device and method of forming the same. This invention features a nonvolatile memory device that includes a first active region and a second active region defined in a substrate by a device isolation layer. It incorporates a Metal Oxide Silicon Field-Effect Transistor (MOSFET) on the first active region, which includes a first electrode pattern. Additionally, a Metal Oxide Silicon (MOS) capacitor is disposed on the second active region, featuring a second electrode pattern. Notably, the first electrode pattern is narrower in the widthwise direction of the channel of the MOSFET than the first active region. Kyoung-Eun Uhn has 1 patent to his name.

Career Highlights

Kyoung-Eun Uhn is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has positioned him as a key player in the development of innovative memory solutions. His expertise in semiconductor technology has contributed significantly to the company's advancements in this field.

Collaborations

Kyoung-Eun Uhn has collaborated with notable colleagues, including Oh-Kyum Kwon and Tae-Jung Lee. These collaborations have fostered a productive environment for innovation and have led to significant advancements in memory technology.

Conclusion

Kyoung-Eun Uhn is a distinguished inventor whose work in nonvolatile memory technology has made a lasting impact. His contributions continue to shape the future of data storage solutions.