Samsung Electronics Co., Ltd.

Kyoung-Eun Uhn

Byung-Sun Kim

Tae-Jung Lee

Oh-Kyum Kwon

A nonvolatile memory device has a first active region and a second active region defined in a substrate by a device isolation layer, a Metal Oxide Silicon Field-Effect Transistor (MOSFET) disposed on the first active region and including a first electrode pattern, and a Metal Oxide Silicon (MOS) capacitor disposed on the second active region and including a second electrode pattern, and in which the first electrode pattern is narrower in the widthwise direction of the channel of the MOSFET than the first active region.

Growing community of inventors

Incheon, South Korea

Kyoung-Eun Uhn