Kwangjae Lee

Title: Kwangjae Lee and Nanoporous GaN Innovation

Introduction

Kwangjae Lee is an inventor associated with Leland Stanford Junior University in Santa Clara, California. His patent work addresses fabrication challenges in gallium nitride (GaN) devices that require embedded p-type layers. Lee is credited with 1 patent.

Latest Patents

Lee’s patent, “Nanoporous GaN on p-type GaN: a Mg out-diffusion compensation layer for heavily Mg-doped p-type GaN,” describes a method for mitigating the effects of magnesium diffusion in GaN device structures. The invention uses a GaN interlayer with a nanoporous top surface to act as a diffusion barrier. Carbon and oxygen impurities introduced during etching can also help compensate for unwanted magnesium doping in layers above the interlayer.

The approach is designed to allow the structure to be grown at high temperatures, avoiding low-temperature growth steps that may reduce material quality. This fabrication strategy may support improved GaN devices that depend on embedded p-type layers.

Career Highlights

Lee’s listed patent reflects work on semiconductor materials and device fabrication. Its focus is on controlling dopant diffusion while preserving conditions favorable to high-quality GaN growth.

Collaborations

The patent information provided associates Lee’s work with Leland Stanford Junior University. No additional collaborators are identified in the supplied details.

Conclusion

Kwangjae Lee’s patent presents a nanoporous GaN interlayer as a way to address magnesium diffusion in heavily doped p-type GaN structures while maintaining high-temperature fabrication.