Seoul, South Korea

Kwang-Byeog Seo


Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 21(Granted Patents)


Company Filing History:


Years Active: 1993

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2 patents (USPTO):Explore Patents

Title: Kwang-Byeog Seo: Innovator in DRAM Technology

Introduction

Kwang-Byeog Seo is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of dynamic random access memory (DRAM) technology. With a total of 2 patents, his work has been instrumental in advancing memory storage solutions.

Latest Patents

Seo's latest patents include innovative manufacturing methods for DRAM cells equipped with stacked capacitors. The first patent outlines a method that begins with defining a switching transistor region by forming a field oxide layer on a semiconductor substrate. It continues with the formation of source and drain regions, followed by the creation of conductive layers and insulating layers. The process culminates in the formation of a dielectric layer and a fourth conductive layer, enhancing the efficiency and performance of DRAM cells.

Career Highlights

Kwang-Byeog Seo is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of memory technology. His expertise in semiconductor manufacturing has positioned him as a key player in the industry.

Collaborations

Seo has collaborated with notable colleagues, including Dae-Je Jin and Tae-young Jeong, to further innovate in the field of DRAM technology.

Conclusion

Kwang-Byeog Seo's contributions to DRAM technology through his patents and work at Samsung Electronics Co., Ltd. highlight his role as a leading inventor in the semiconductor industry. His innovative methods are paving the way for future advancements in memory storage solutions.

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