This inventor holds 2 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 1993.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1993
Title: Kwang-Byeog Seo: Innovator in DRAM Technology
Introduction
Kwang-Byeog Seo is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of dynamic random access memory (DRAM) technology. With a total of 2 patents, his work has been instrumental in advancing memory storage solutions.
Latest Patents
Seo's latest patents include innovative manufacturing methods for DRAM cells equipped with stacked capacitors. The first patent outlines a method that begins with defining a switching transistor region by forming a field oxide layer on a semiconductor substrate. It continues with the formation of source and drain regions, followed by the creation of conductive layers and insulating layers. The process culminates in the formation of a dielectric layer and a fourth conductive layer, enhancing the efficiency and performance of DRAM cells.
Career Highlights
Kwang-Byeog Seo is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of memory technology. His expertise in semiconductor manufacturing has positioned him as a key player in the industry.
Collaborations
Seo has collaborated with notable colleagues, including Dae-Je Jin and Tae-young Jeong, to further innovate in the field of DRAM technology.
Conclusion
Kwang-Byeog Seo's contributions to DRAM technology through his patents and work at Samsung Electronics Co., Ltd. highlight his role as a leading inventor in the semiconductor industry. His innovative methods are paving the way for future advancements in memory storage solutions.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile