Kuzuhiro Hamamoto

Title: Kuzuhiro Hamamoto: Innovator in Integrated Circuit Technology

Introduction

Kuzuhiro Hamamoto is a notable inventor based in Delmar, NY (US). He has made significant contributions to the field of integrated circuits, particularly through his innovative patent that addresses the challenges of interconnect structures.

Latest Patents

Hamamoto holds a patent for a "Diffusion barrier for integrated circuits formed from a layer of reactive metal and method of fabrication." This invention involves an interconnect structure for integrated circuits and outlines a method for forming this structure. The process includes depositing a metallic layer containing a reactive metal within an interconnect opening formed in a dielectric material. The method further involves thermally reacting portions of the metallic layer with the dielectric material to create a diffusion barrier. This barrier primarily consists of a compound formed from the reactive metal and the dielectric reactant element. The interconnect opening can take various forms, such as a trench, a via, or a dual damascene opening, and is filled with Cu metal, surrounded by the diffusion barrier.

Career Highlights

Kuzuhiro Hamamoto is associated with Tokyo Electron Limited, a company known for its advancements in semiconductor manufacturing equipment. His work has contributed to the development of more efficient and reliable integrated circuits, which are essential for modern electronic devices.

Collaborations

Throughout his career, Hamamoto has collaborated with esteemed colleagues such as Tadahiro Ishizaka and Satohiko Hoshino. These collaborations have fostered innovation and have played a crucial role in the advancement of integrated circuit technology.

Conclusion

Kuzuhiro Hamamoto's contributions to the field of integrated circuits through his innovative patent demonstrate his commitment to advancing technology. His work continues to influence the semiconductor industry and paves the way for future innovations.