Kurt Hoffman

Title: Kurt Hoffman - Innovator in Resistive Ferroelectric Memory Technology

Introduction

Kurt Hoffman is a notable inventor based in Taufkirchen, Germany. He has made significant contributions to the field of memory technology, particularly with his innovative work on resistive ferroelectric memory cells. His expertise and dedication to advancing technology have positioned him as a key figure in the industry.

Latest Patents

Hoffman holds a patent for a resistive ferroelectric memory cell. This invention includes a selection transistor with first and second zones of a first conduction type. The design features a storage capacitor with one electrode at a fixed cell-plate voltage and another electrode connected to the first zone of the selection transistor. The semiconductor substrate has a second conduction type that is opposite to the first conduction type. The arrangement of the storage capacitor and the selection transistor within the semiconductor substrate is crucial for its functionality. Additionally, a resistor is placed between the other electrode of the storage capacitor and the fixed cell-plate voltage, with specific resistance characteristics that enhance the performance of the memory cell.

Career Highlights

Kurt Hoffman is currently employed at Siemens Aktiengesellschaft, where he continues to innovate and develop new technologies. His work at Siemens has allowed him to collaborate with other talented professionals in the field, further enhancing his contributions to memory technology.

Collaborations

Hoffman has worked closely with his coworker, Oskar Kowarik, to advance their research and development efforts. Their collaboration has been instrumental in driving innovation within their projects.

Conclusion

Kurt Hoffman is a distinguished inventor whose work on resistive ferroelectric memory cells has made a significant impact in the field of memory technology. His contributions continue to shape the future of this important area of research.