The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2003
Filed:
Jan. 22, 2001
Oskar Kowarik, Neubiberg, DE;
Kurt Hoffman, Taufkirchen, DE;
Siemens Aktiengesellschaft, Munich, DE;
Abstract
A resistive ferroelectric memory cell includes a selection transistor having first and second zones of a first conduction type. A storage capacitor has one electrode at a fixed cell-plate voltage and another electrode connected to the first zone of the selection transistor. A semiconductor substrate has a second conduction type opposite the first conduction type. The storage capacitor and the selection transistor are disposed in the semiconductor substrate. A resistor is disposed between the other electrode of the storage capacitor and the fixed cell-plate voltage. The resistor has a resistance R such that R <<R <<R , in which R is a reverse resistance of a pn junction between the first zone of the selection transistor and the semiconductor substrate and R is a resistance between the first zone and the second zone of the selection transistor, in a turned-on state.