Yamagata, Japan

Kunio Hamaguchi

This inventor holds 1 USPTO granted patent. Top assignee: Toshiba Ceramics Co., Ltd.. Active years: 1984.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kunio Hamaguchi. Retrieved from https://idiyas.com/inventor/kunio-hamaguchi-brsqjdco

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 1984

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1 patent (USPTO):Explore Patents

Title: Kunio Hamaguchi: Innovator in Silicon Carbide Materials

Introduction

Kunio Hamaguchi is a notable inventor based in Yamagata, Japan. He has made significant contributions to the field of materials science, particularly in the development of silicon carbide materials. His innovative work has led to advancements that are crucial for various industrial applications.

Latest Patents

Hamaguchi holds a patent for a silicon carbide material designed for low-melting point fusion metal. This material is composed of recrystallization silicon carbide or silicon nitride coupled silicon carbide, containing free silicon and silicon oxide in a total amount of 5% by weight or below. More preferably, the silicon carbide material is formed on the surface with a film of vapor phase growth silicon carbide or silicon nitride. Additionally, on this film or in place of this film, silicon nitride and/or boron nitride is coated.

Career Highlights

Kunio Hamaguchi is associated with Toshiba Ceramics Co., Ltd., where he has been instrumental in advancing the company's research and development efforts. His expertise in silicon carbide materials has positioned him as a key figure in the industry.

Collaborations

Hamaguchi has collaborated with Isao Sakashita, working together to enhance the understanding and application of silicon carbide materials in various sectors.

Conclusion

Kunio Hamaguchi's contributions to the field of materials science, particularly through his patented innovations, highlight his role as a leading inventor in silicon carbide technology. His work continues to influence advancements in industrial applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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