Tokyo, Japan

Kuniaki Goto


Average Co-Inventor Count = 3.1

ph-index = 5

Forward Citations = 94(Granted Patents)


Location History:

  • Tokyo, JA (1976 - 1977)
  • Setagaya, JP (1994)
  • Tokyo, JP (1978 - 2002)

Company Filing History:


Years Active: 1976-2002

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15 patents (USPTO):Explore Patents

Title: Kuniaki Goto: Innovator in Dry Etching Technology

Introduction

Kuniaki Goto is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of dry etching technology, holding a total of 15 patents. His innovative approaches have advanced the methods used in semiconductor manufacturing and other related industries.

Latest Patents

Among his latest patents, Goto has developed a dry etching method that utilizes a dry etching gas containing a perfluorocycloolefin. This method involves subjecting a substrate to dry etching while generating a plasma with a high-density region of at least 10 /cm. The perfluorocycloolefins used in this process typically contain 3 to 8 carbon atoms, with a preference for those having 4 to 6 carbon atoms. Additionally, he has patented a gaseous composition for dry etching that includes a perfluorocycloolefin and 1 to 40% by mole of at least one oxygen ingredient, selected from oxygen gas and oxygen-containing gaseous compounds.

Career Highlights

Kuniaki Goto has worked with notable companies, including Nippon Zeon Company, Ltd. His work has been instrumental in developing advanced technologies that enhance the efficiency and effectiveness of dry etching processes.

Collaborations

Throughout his career, Goto has collaborated with esteemed colleagues such as Toshiro Yamada and Akira Sekiya. These partnerships have fostered innovation and contributed to the success of various projects in the field.

Conclusion

Kuniaki Goto's contributions to dry etching technology have established him as a key figure in the industry. His innovative patents and collaborations continue to influence advancements in semiconductor manufacturing.

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