This inventor holds 1 USPTO granted patent and 3 published patent applications. Top assignee: Taiwan-Asia Semiconductor Corporation. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Kun-Te Lin and His Light-Emitting Diode Innovation.
Introduction
Kun-Te Lin is an inventor associated with Hsinchu City, Taiwan. His patent work includes a light-emitting diode structure designed to guide current through the device’s light-emitting layer.
Latest Patents
Lin is credited with 1 patent, titled “Light-emitting diode structure.” The invention includes a substrate with a first electrode, first and second semiconductor layers, and a light-emitting layer between them. A second electrode sits on the second semiconductor layer, while at least one trench extends inward from its light-exit surface toward the substrate. The trench helps direct current from the second electrode through the light-emitting layer outside the electrode and toward the first electrode, promoting current distribution through the device.
Career Highlights
Lin is associated with Taiwan-Asia Semiconductor Corporation. His listed patent reflects work on the structure and current flow of light-emitting diodes.
Collaborations
Kuo-Chen Wu and Ching-Shih Ma are identified as Lin’s coworkers. The available information does not specify their roles in the patent or the extent of their collaboration.
Conclusion
Kun-Te Lin’s recorded patent focuses on a light-emitting diode structure that uses a current-blocking trench to influence current distribution, highlighting his contribution to semiconductor device innovation.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile