Hsinchu, Taiwan

Kun-An Chiu


Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2016

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1 patent (USPTO):Explore Patents

Title: **Inventor Kun-An Chiu: A Pioneer in Epitaxial Diamond Growth**

Introduction

Kun-An Chiu is an esteemed inventor based in Hsinchu, Taiwan, known for his innovative contributions to the field of materials science. His noteworthy patent focuses on the growth of epitaxial diamond, which holds significant potential for various applications in electronics and optics.

Latest Patents

Chiu's most prominent patent is titled “Method for growing epitaxial diamond.” This groundbreaking method involves depositing a metallic layer on a diamond substrate, followed by the application of an epitaxial diamond film atop the metallic layer. The introduction of the metallic buffer layer helps alleviate stress accumulated in the thin film of the epitaxial diamond, effectively preventing cracks. This innovative approach allows for the development of epitaxial diamond layers with optimal thickness and superior quality.

Career Highlights

Kun-An Chiu is associated with National Chiao Tung University, where he embraces a role that combines research and innovation. His dedication to advancing material science has made him a key contributor in his field. With one patent to his name, he exemplifies the spirit of innovation that is crucial for academic and practical advancements.

Collaborations

Throughout his career, Chiu has collaborated with notable colleagues such as Li Yuan Chang and Ping-Hsun Wu. These partnerships have not only enriched his research experience but have also contributed to the collective knowledge and development of cutting-edge technologies within the university.

Conclusion

Kun-An Chiu's work, particularly his patent for the growth of epitaxial diamond, highlights his role as a significant inventor in materials science. His efforts pave the way for further innovations that can improve various sectors, proving that his contributions are vital to the future of technology and engineering.

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