The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2016
Filed:
Jul. 12, 2013
Applicant:
National Chiao Tung University, Hsinchu, TW;
Inventors:
Assignee:
NATIONAL CHIAO TUNG UNIVERSITY, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/04 (2006.01); C30B 25/18 (2006.01);
U.S. Cl.
CPC ...
C30B 25/183 (2013.01); C30B 29/04 (2013.01);
Abstract
A method for growing epitaxial diamond is provided here. A metallic layer is deposited on a diamond substrate and is followed by an epitaxial diamond film deposited on top of the metallic layer. As a buffer layer, the metallic layer relieves stress accumulated in the thin film of the epitaxial diamond to prevent cracks. In consequence, diamond epitaxial layers with desired thickness and good quality can be obtained.
Chang, Li. (2016). Method for growing epitaxial diamond (U.S. Patent No. 9347149). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9347149
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile