Kuang-Yu Huang

Title: Kuang-Yu Huang and Semiconductor Process Innovation.

Introduction

Kuang-Yu Huang is an inventor associated with Semiconductor Manufacturing International (Shanghai) Corporation in Shanghai, China. His patent work addresses a process for repairing plasma damage that can occur during the formation of sidewall spacers in integrated circuit memory devices.

Latest Patents

Huang is associated with 1 patent: “Method for Repairing Plasma Damage After Spacer Formation for Integrated Circuit Devices.” The method begins with a partially completed substrate containing multiple MOS gate structures. A conformal dielectric layer is formed over the structures, and anisotropic etching shapes the layer into sidewall spacers. During etching, exposed substrate regions may sustain physical damage, such as plasma damage or cracking.

The method then smooths exposed portions of both the spacers and the substrate using a plasma treatment that includes an isotropic etching component. This treatment helps reduce surface irregularities and brings the exposed spacer surfaces to a predetermined roughness value.

Career Highlights

Huang’s patent reflects work on semiconductor fabrication processes, particularly techniques for addressing damage introduced during spacer formation. The approach focuses on improving exposed surfaces in integrated circuit memory devices after anisotropic etching.

Collaborations

Huang’s listed coworkers include Mingching Wang and Yan-Shi Tian. His company affiliation connects his patent work with semiconductor manufacturing in Shanghai.

Conclusion

Kuang-Yu Huang’s patent describes a plasma-treatment process for smoothing substrate and spacer surfaces after spacer formation, highlighting a targeted contribution to integrated circuit manufacturing.