Hsinchu, Taiwan

Kuan-Yu Wang

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kuan-Yu Wang. Retrieved from https://idiyas.com/inventor/kuan-yu-wang-t66ohpxj

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Kuan-Yu Wang: Innovator in Semiconductor Technology

Introduction

Kuan-Yu Wang is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, showcasing his expertise through innovative patents. His work is particularly relevant in the rapidly evolving landscape of electronics and materials science.

Latest Patents

Kuan-Yu Wang holds a patent for a semiconductor device and its forming method. This patent describes a method of forming a semiconductor device that includes creating a fin structure with alternating layers of different semiconductor compositions. The process involves forming a dummy gate structure, gate spacers, and a gate trench, ultimately leading to the creation of nanosheets that enhance the device's performance. The patent emphasizes the importance of a titanium nitride layer with a specific atomic ratio, which is crucial for the device's functionality.

Career Highlights

Kuan-Yu Wang is associated with Taiwan Semiconductor Manufacturing Co., Ltd., a leading company in the semiconductor industry. His role at the company allows him to work on cutting-edge technologies that drive advancements in electronic devices. His contributions have been instrumental in developing more efficient and powerful semiconductor solutions.

Conclusion

Kuan-Yu Wang's innovative work in semiconductor technology exemplifies the impact of dedicated inventors in the field. His patent reflects a deep understanding of materials and processes that are essential for the future of electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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