This inventor holds 1 USPTO granted patent. Top assignee: Globalfoundries Inc.. Active years: 2014.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2014
Title: Krishnan Bharat: Innovator in Semiconductor Technology
Introduction
Krishnan Bharat is a notable inventor based in Clifton Park, NY (US). He has made significant contributions to the field of semiconductor technology, particularly in the area of isolation structures for field effect transistors.
Latest Patents
Krishnan Bharat holds a patent for the "Fabrication of reverse shallow trench isolation structures with super-steep retrograde wells." This innovative method involves a thermal oxidation process to create a layer of thermal oxide material on a semiconductor substrate. The process includes forming multiple openings in the thermal oxide layer to establish isolation regions, which expose specific surface regions of the semiconductor layer.
Career Highlights
Krishnan Bharat is currently employed at GlobalFoundries Inc., where he applies his expertise in semiconductor fabrication. His work focuses on enhancing the performance and efficiency of semiconductor devices through innovative isolation techniques.
Collaborations
He has collaborated with notable colleagues, including Tong Weihua and Lun Zhao, contributing to advancements in semiconductor technology.
Conclusion
Krishnan Bharat's work in semiconductor technology exemplifies the innovative spirit of modern inventors. His contributions continue to influence the development of advanced electronic devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile