Clifton Park, NY, United States of America

Krishnan Bharat


Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2014

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1 patent (USPTO):Explore Patents

Title: Krishnan Bharat: Innovator in Semiconductor Technology

Introduction

Krishnan Bharat is a notable inventor based in Clifton Park, NY (US). He has made significant contributions to the field of semiconductor technology, particularly in the area of isolation structures for field effect transistors.

Latest Patents

Krishnan Bharat holds a patent for the "Fabrication of reverse shallow trench isolation structures with super-steep retrograde wells." This innovative method involves a thermal oxidation process to create a layer of thermal oxide material on a semiconductor substrate. The process includes forming multiple openings in the thermal oxide layer to establish isolation regions, which expose specific surface regions of the semiconductor layer.

Career Highlights

Krishnan Bharat is currently employed at GlobalFoundries Inc., where he applies his expertise in semiconductor fabrication. His work focuses on enhancing the performance and efficiency of semiconductor devices through innovative isolation techniques.

Collaborations

He has collaborated with notable colleagues, including Tong Weihua and Lun Zhao, contributing to advancements in semiconductor technology.

Conclusion

Krishnan Bharat's work in semiconductor technology exemplifies the innovative spirit of modern inventors. His contributions continue to influence the development of advanced electronic devices.

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