Saitama, Japan

Kousuke Tsuji

This inventor holds 2 USPTO granted patents. Top assignees: Hitachi Ulsi Systems Co., Ltd., Hitachi, Ltd., Other. Active years: 2003-2006.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kousuke Tsuji. Retrieved from https://idiyas.com/inventor/kousuke-tsuji

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 50.0

Average Co-Inventor Count = 4.0

ph-index = 2

Forward Citations = 12(Granted Patents)


Company Filing History:


Years Active: 2003-2006

Loading Chart...
2 patents (USPTO):Explore Patents

Title: Kousuke Tsuji: Innovator in Semiconductor Technology

Introduction

Kousuke Tsuji is a prominent inventor based in Saitama, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on improving the efficiency and design processes of semiconductor devices.

Latest Patents

Tsuji's latest patents include a semiconductor device and a method for fabricating the same. This innovation reduces the number of design processes required for fabricating semiconductor devices by utilizing the parallel connection of multiple unit bipolar transistors that are completely electrically isolated from each other. This design is implemented in a semiconductor layer of an SOI substrate, allowing for the formation of a bipolar transistor with a large current capacity.

Career Highlights

Throughout his career, Kousuke Tsuji has worked with notable companies such as Hitachi, Ltd. and Hitachi ULSI Systems Co., Ltd. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Some of Tsuji's notable coworkers include Yoichi Tamaki and Takayuki Iwasaki. Their collaboration has likely played a role in advancing the projects they have worked on together.

Conclusion

Kousuke Tsuji is a key figure in the semiconductor industry, with a focus on enhancing device fabrication processes. His patents reflect his commitment to innovation and efficiency in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…