Company Filing History:
Years Active: 2007
Title: Kounosuke Kitamura: Innovator in Silicon Crystal Technology
Introduction
Kounosuke Kitamura is a notable inventor based in Tokyo, Japan. He has made significant contributions to the field of silicon crystal technology, holding 2 patents that focus on improving the production and simulation processes of silicon single crystals. His work has implications for various industries, particularly in semiconductor manufacturing.
Latest Patents
Kitamura's latest patents include a "Method of simulation with respect to density distribution and size distribution of void defect within single crystal and oxygen precipitation nucleus within single crystal." This innovative method aims to precisely predict the distribution of densities and sizes of void defects in a single crystal. The computer-based simulation he developed determines the distribution of temperatures within a single crystal growing from a melt, considering convection currents in the melt. Additionally, he has patented a "Method of producing silicon monocrystal," which involves controlling the diameter of a silicon single crystal rod by adjusting the pulling speed and heater temperature. This method utilizes a PID control system to ensure the silicon single crystal rod maintains a target diameter and temperature.
Career Highlights
Throughout his career, Kounosuke Kitamura has worked with prominent companies in the semiconductor industry, including Sumitomo Mitsubishi Silicon Corporation and Sumco Corporation. His experience in these organizations has allowed him to refine his expertise in silicon crystal production and simulation techniques.
Collaborations
Kitamura has collaborated with notable colleagues such as Jun Furukawa and Daisuke Wakabayashi. These partnerships have contributed to the advancement of his research and the successful development of his patented technologies.
Conclusion
Kounosuke Kitamura's innovative work in silicon crystal technology has established him as a key figure in the field. His patents reflect a deep understanding of the complexities involved in silicon production and simulation, paving the way for advancements in semiconductor manufacturing.