Tokyo, Japan

Kouji Satou

USPTO Granted Patents = 5 

 

Average Co-Inventor Count = 3.2

ph-index = 1

Forward Citations = 5(Granted Patents)


Location History:

  • Niigata, JP (2013)
  • Chiyoda-ku, JP (2015)
  • Tokyo, JP (2020)

Company Filing History:


Years Active: 2013-2025

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5 patents (USPTO):

Title: Kouji Satou: Innovator in Semiconductor Technology

Introduction

Kouji Satou is a prominent inventor based in Tokyo, Japan, known for his significant contributions to semiconductor technology. With a total of 5 patents to his name, Satou has made strides in enhancing the performance and efficiency of semiconductor devices.

Latest Patents

Among his latest innovations, Satou has developed a semiconductor device that enables the initialization of data in memory cells at a relatively high speed while minimizing area increase. This technology utilizes a control circuit that manages various components, including transistors and word lines, to efficiently initialize multiple memory cells. Another notable patent involves a semiconductor device featuring a first regulator for generating a higher power supply potential and a second regulator for a lower potential. This device includes a static random access memory (SRAM) that operates in both normal and resume standby modes, optimizing power supply management for memory arrays.

Career Highlights

Throughout his career, Kouji Satou has worked with leading companies in the technology sector, including Renesas Electronics Corporation and Hitachi Industrial Equipment Systems Co., Ltd. His experience in these organizations has allowed him to refine his expertise in semiconductor technology and contribute to groundbreaking innovations.

Collaborations

Satou has collaborated with notable colleagues such as Shunya Nagata and Toshiko Kimura, further enhancing his work in the field of semiconductor devices.

Conclusion

Kouji Satou's contributions to semiconductor technology reflect his dedication to innovation and excellence. His patents not only demonstrate his technical prowess but also pave the way for advancements in memory cell technology.

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