Hamura, Japan

Kouji Mikami

This inventor holds 1 USPTO granted patent. Top assignees: Hitachi Ulsi Systems Co., Ltd., Hitachi, Ltd.. Active years: 2005.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kouji Mikami. Retrieved from https://idiyas.com/inventor/kouji-mikami-am8l9mi2

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2005

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1 patent (USPTO):Explore Patents

Title: Kouji Mikami: Innovator in Semiconductor Technology

Introduction

Kouji Mikami is a notable inventor based in Hamura, Japan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.

Latest Patents

Mikami holds a patent for a semiconductor device and a method of manufacturing the same. This invention provides a bipolar transistor with improved performance. The design includes an insulation film made of silicon oxide, which is formed through oxidation treatment on the side surface of an emitter aperture. Additionally, an epitaxial layer composed of SiGe is selectively grown in an aperture created by removing a silicon nitride film, resulting in an undercut.

Career Highlights

Throughout his career, Kouji Mikami has worked with prominent companies such as Hitachi, Ltd. and Hitachi ULSI Systems Co., Ltd. His experience in these organizations has allowed him to develop and refine his expertise in semiconductor technology.

Collaborations

Mikami has collaborated with notable coworkers, including Takashi Hashimoto and Tsutomu Udo. Their combined efforts have contributed to advancements in the semiconductor field.

Conclusion

Kouji Mikami's work in semiconductor technology exemplifies innovation and dedication. His patent reflects a significant advancement in bipolar transistor performance, showcasing his impact on the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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