The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2005
Filed:
Mar. 04, 2002
Applicants:
Takashi Hashimoto, Akishima, JP;
Kouji Mikami, Hamura, JP;
Tsutomu Udo, Musashimurayama, JP;
Masao Kondo, Higashimurayama, JP;
Eiji Oue, Ome, JP;
Inventors:
Takashi Hashimoto, Akishima, JP;
Kouji Mikami, Hamura, JP;
Tsutomu Udo, Musashimurayama, JP;
Masao Kondo, Higashimurayama, JP;
Eiji Oue, Ome, JP;
Assignees:
Hitachi, Ltd., Tokyo, JP;
Hitachi ULSI Systems Co., Ltd., Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/331 ;
U.S. Cl.
CPC ...
Abstract
The invention provides a bipolar transistor with improved performance. An insulation film comprising a silicon oxide film is formed by means of oxidation treatment on the side surface of an emitter aperture, and then an epitaxial layer comprised of SiGe is grown selectively in an aperture formed by removing a silicon nitride film so as to form under cut.