Kuwana, Japan

Kouichi Nagai

USPTO Granted Patents = 1 

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2020

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Kouichi Nagai: Innovator in Semiconductor Technology

Introduction

Kouichi Nagai is a prominent inventor based in Kuwana, Japan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.

Latest Patents

Kouichi Nagai holds a patent for a semiconductor device and its fabrication method. This invention includes a substrate, a transistor formed on the substrate's surface, and multiple insulating and semiconductor films. Notably, the hydrogen permeability of the third insulating film is higher than that of the first insulating film, while the second and fourth insulating films exhibit higher hydrogen and oxygen permeabilities compared to the first and third films.

Career Highlights

Kouichi Nagai is associated with Fujitsu Semiconductor Memory Solution Limited, where he applies his expertise in semiconductor technology. His work has contributed to advancements in the efficiency and functionality of semiconductor devices.

Collaborations

Kouichi has collaborated with notable colleagues, including Ko Nakamura and Mitsuhiro Nakamura, enhancing the innovation process within his field.

Conclusion

Kouichi Nagai's contributions to semiconductor technology through his patent demonstrate his commitment to innovation and advancement in the industry. His work continues to influence the development of efficient semiconductor devices.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…