The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2020
Filed:
Jan. 03, 2019
Fujitsu Semiconductor Limited, Yokohama, JP;
Kouichi Nagai, Kuwana, JP;
Ko Nakamura, Aizuwakamatsu, JP;
Mitsuhiro Nakamura, Aizuwakamatsu, JP;
Akio Ito, Kawasaki, JP;
FUJITSU SEMICONDUCTOR MEMORY SOLUTION LIMITED, Yokohama, JP;
Abstract
A semiconductor device includes a substrate; a transistor formed on a surface of the substrate; a first insulating film formed above the transistor; a second semiconductor film formed on the first semiconductor film; a third semiconductor film formed on the second semiconductor film; a fourth semiconductor film formed on the third semiconductor film; and a ferroelectric capacitor formed on the fourth insulating film, wherein a hydrogen permeability of the third insulating film is higher than a hydrogen permeability of the first insulating film, and a hydrogen permeability and an oxygen permeability of the second insulating film and of the fourth insulating film are higher than the hydrogen permeability and an oxygen permeability of the first insulating film and of the third insulating film.