Company Filing History:
Years Active: 2025
Title: Innovations by Kouassi Sebastien Kouassi
Introduction
Kouassi Sebastien Kouassi is an accomplished inventor based in San Diego, California. He has made significant contributions to the field of radio frequency technology, particularly through his innovative patent related to silicon-on-insulator substrates.
Latest Patents
Kouassi holds a patent for "Back-gate effect control via doping." This invention presents methods and structures for mitigating back-gate effects in a radio frequency (RF) silicon-on-insulator (SOI) substrate. The patent details a first implant or junction formed in a region of a trap-rich layer (TRL) of the RF-SOI, which is located below a first circuit or device that needs protection. The first implant is fully contained within the TRL, ensuring that its planar surface area completely encompasses the projection of the planar surface area of the first circuit or device. Additionally, the first implant is biased via a through BOX contact (TBC) that penetrates the BOX layer at a shallow trench isolation region formed in the RF-SOI. A second implant or junction is also formed in a region of the TRL below a second circuit or device, with both implants being disjoint and separated by an undoped region of the TRL.
Career Highlights
Kouassi is currently employed at Murata Manufacturing Co., Ltd., where he continues to develop innovative solutions in the field of RF technology. His work has been instrumental in advancing the capabilities of silicon-on-insulator substrates, which are crucial for modern electronic devices.
Collaborations
Kouassi has collaborated with notable colleagues, including Sinan Goktepeli and Simon Edward Willard. These collaborations have further enriched his research and development efforts in the field.
Conclusion
Kouassi Sebastien Kouassi is a prominent inventor whose work in RF technology has led to significant advancements in silicon-on-insulator substrates. His innovative patent demonstrates his commitment to enhancing electronic device performance through effective engineering solutions.