Konstantinos Zekentes

Title: Konstantinos Zekentes: Innovator in Silicon Carbide Technology

Introduction

Konstantinos Zekentes is a notable inventor based in Crete, Greece. He has made significant contributions to the field of semiconductor technology, particularly in the development of methods for creating ohmic contacts to p-type silicon carbide.

Latest Patents

Zekentes holds a patent for a method of making an ohmic contact to p-type silicon carbide, which comprises titanium carbide and nickel silicide. This innovative method involves producing an ohmic contact through the deposition of two layers, with the first layer consisting of nickel silicide and the second layer made of titanium carbide. The deposited layers undergo annealing to convert a portion of the metals into nickel silicide and titanium carbide. The contact is formed through a reaction between the metals and the semiconductor, allowing for the in-situ simultaneous formation of metal silicide and carbide, which effectively suppresses the release of excess carbon at the contact interface. Additionally, noble metals may be deposited between the titanium and nickel layers to enhance the contact morphology.

Career Highlights

Zekentes is affiliated with the Foundation for Research and Technology Hellas, where he continues to advance research in semiconductor technologies. His work has been instrumental in improving the efficiency and reliability of silicon carbide applications.

Collaborations

One of his notable collaborators is Konstantin V Vassilievski, with whom he has worked on various projects related to semiconductor technology.

Conclusion

Konstantinos Zekentes is a pioneering inventor whose work in silicon carbide technology has the potential to impact various applications in the semiconductor industry. His innovative methods and collaborations continue to drive advancements in this critical field.