Haifa, Israel

Konstantin Dorfman


Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2017-2018

Loading Chart...
2 patents (USPTO):Explore Patents

Title: The Innovations of Konstantin Dorfman

Introduction

Konstantin Dorfman is a notable inventor based in Haifa, Israel. He has made significant contributions to the field of technology, particularly in storage resource management and FLASH memory devices. With a total of 2 patents, his work has had a considerable impact on the industry.

Latest Patents

Dorfman's latest patents include "Storage resource management in virtualized environments" and "Read disturb and data retention handling for NAND devices." The first patent focuses on providing a virtualization layer in a storage controller, allowing clients to access virtual resource allocations as if they were the sole users of the storage device. This innovation enables efficient sharing of storage resources in virtualized environments. The second patent addresses the challenges of read disturb and data retention errors in FLASH memory devices. By implementing a read counter and maintaining a last-erase timestamp, this invention aims to enhance the longevity and reliability of FLASH memory.

Career Highlights

Throughout his career, Konstantin Dorfman has worked with prominent companies such as Qualcomm Innovation Center, Inc. and Qualcomm Incorporated. His experience in these organizations has allowed him to develop and refine his innovative ideas, contributing to advancements in technology.

Collaborations

Dorfman has collaborated with talented individuals, including Tatyana Brokhman and Assaf Shacham. These partnerships have fostered a creative environment that has led to the development of groundbreaking technologies.

Conclusion

Konstantin Dorfman's contributions to the field of technology through his patents and collaborations highlight his role as an influential inventor. His work continues to shape the future of storage management and memory devices.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…