The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2017
Filed:
Mar. 25, 2015
Qualcomm Innovation Center, Inc., San Diego, CA (US);
Tatyana Brokhman, Kiryat Ata, IL;
Konstantin Dorfman, Haifa, IL;
Qualcomm Innovation Center, Inc., San Diego, CA (US);
Abstract
Systems, methods, and apparatus are herein disclosed for reducing read disturb and data retention errors in FLASH memory devices designed for long lifespans, such as greater than 10 or 15 years. Read disturb errors can be reduced by maintaining a read counter stored in a volatile memory and a FASTMAP memory block of the FLASH memory. When the read counter meets a threshold, then the associated memory block can be scheduled for scrubbing. Data retentions errors can be reduced by maintaining a last-erase timestamp in metadata of each memory block of a FLASH memory. When the last-erase timestamp associated with a given memory block meets a threshold, then the memory block can be scheduled for scrubbing.