Hirakata, Japan

Koji Goto

This inventor holds 1 USPTO granted patent. Top assignee: Matsushita Electric Works, Ltd.. Active years: 2006.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Koji Goto. Retrieved from https://idiyas.com/inventor/koji-goto-20tux9iv

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 9(Granted Patents)


Company Filing History:


Years Active: 2006

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1 patent (USPTO):Explore Patents

Title: Koji Goto: Innovator in Semiconductor Technology

Introduction

Koji Goto is a notable inventor based in Hirakata, Japan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative designs and methods.

Latest Patents

Koji Goto holds a patent for a semiconductor acceleration sensor and the method of manufacturing it. This invention features a frame with an opening, flexible beams extending into the opening, and a weight that can move freely. The piezoresistors mounted on the beams respond to accelerations, allowing for precise measurements. The design includes damper plate portions that serve as stoppers to limit the weight's movement, enhancing the sensor's shock resistance.

Career Highlights

Goto is associated with Matsushita Electric Works, Ltd., where he has contributed to various projects in semiconductor technology. His work has been instrumental in advancing the capabilities of acceleration sensors, making them more reliable and efficient.

Collaborations

Koji Goto has worked alongside talented colleagues such as Hitoshi Yoshida and Kazushi Kataoka. Their collaborative efforts have furthered the development of innovative technologies in their field.

Conclusion

Koji Goto's contributions to semiconductor technology exemplify the spirit of innovation. His patent for the semiconductor acceleration sensor showcases his ability to create solutions that enhance performance and reliability in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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