Tokyo, Japan

Koichiro Morita

This inventor holds 1 USPTO granted patent and 3 published patent applications. Top assignee: Taiyo Yuden Corp.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Koichiro Morita. Retrieved from https://idiyas.com/inventor/koichiro-morita-82g4960d

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Koichiro Morita and Multilayer Ceramic Electronic Components.

Introduction

Koichiro Morita is an inventor associated with Taiyo Yuden Corp. in Tokyo, Japan. His listed patent work concerns the design and manufacture of multilayer ceramic electronic components.

Latest Patents

Morita is credited with 1 patent: “Multilayer Ceramic Electronic Component and Method for Manufacturing Multilayer Ceramic Electronic Component.” The invention describes a component built from alternating dielectric and internal electrode layers, with external electrodes on the body. In the capacitor section, the average diameter of dielectric particles in the center is smaller than the average diameter in at least part of the outer peripheral region. The patent presents this particle-size arrangement as part of the component’s structure and manufacturing approach.

Career Highlights

The available information identifies Morita’s work with Taiyo Yuden Corp. and highlights his contribution to multilayer ceramic electronic component technology. The patent addresses both the component’s layered construction and a method for manufacturing it.

Collaborations

Morita’s listed coworker is Yasuhiro Matsumoto. The provided information does not specify their respective roles or the details of their collaboration.

Conclusion

Koichiro Morita’s listed patent reflects work on the structure and manufacture of multilayer ceramic electronic components, including the distribution of dielectric particle sizes within the capacitor section.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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