Kusatsu, Japan

Koichi Ashizawa



Average Co-Inventor Count = 2.5

ph-index = 5

Forward Citations = 59(Granted Patents)


Location History:

  • Yokohama, JP (1995 - 1997)
  • Kusatsu, JP (2000 - 2019)
  • Aichi, JP (2019)
  • Tokyo, JP (1990 - 2021)
  • Nagoya, JP (2022)

Company Filing History:


Years Active: 1990-2022

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10 patents (USPTO):Explore Patents

Title: The Innovations of Koichi Ashizawa

Introduction

Koichi Ashizawa is a prominent inventor based in Kusatsu, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 10 patents. His work focuses on innovative methods and devices for manufacturing aluminum oxide semiconductors.

Latest Patents

Among his latest patents is an aluminum oxide semiconductor manufacturing method and device. This method involves positioning an anode and a cathode at opposite ends of a base material containing aluminum oxide. The process includes heating the base material to melt it while causing a current to flow between the anode and cathode, facilitating a molten salt electrolysis reaction. This results in the formation of p-type and n-type aluminum oxide semiconductor layers. Another notable patent involves a semiconductor layer that features a pn junction, where n-type and p-type semiconductors are joined, enhancing the efficiency of semiconductor devices.

Career Highlights

Throughout his career, Koichi Ashizawa has worked with notable companies such as UACJ Corporation and The Furukawa Electric Co., Ltd. His experience in these organizations has allowed him to refine his expertise in semiconductor manufacturing and contribute to advancements in the industry.

Collaborations

Koichi has collaborated with esteemed colleagues, including Hitoshi Kato and Toshio Horie. Their combined efforts have led to innovative solutions in semiconductor technology.

Conclusion

Koichi Ashizawa's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the field. His innovative methods continue to influence the development of advanced semiconductor devices.

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