The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2021
Filed:
Jun. 08, 2018
Applicant:
Uacj Corporation, Tokyo, JP;
Inventor:
Koichi Ashizawa, Tokyo, JP;
Assignee:
UACJ Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/479 (2006.01); H01L 21/477 (2006.01); H01L 29/24 (2006.01); H01L 29/66 (2006.01); H01L 29/861 (2006.01); H01L 29/88 (2006.01);
U.S. Cl.
CPC ...
H01L 21/479 (2013.01); H01L 21/477 (2013.01); H01L 29/242 (2013.01); H01L 29/247 (2013.01); H01L 29/66969 (2013.01); H01L 29/8611 (2013.01); H01L 29/88 (2013.01);
Abstract
A semiconductor layer of the present invention is a semiconductor layer including: a pn junction at which an n-type semiconductor (AlO(n-type)) and a p-type semiconductor (AlO(p-type)) are joined, the n-type semiconductor (AlO(n-type)) having a donor level that is formed by causing an aluminum oxide film (AlO) to excessively contain aluminum (Al), the p-type semiconductor (AlO(p-type)) having an acceptor level that is formed by causing an aluminum oxide film (AlO) to excessively contain oxygen (O).