Tokyo, Japan

Kohetsu Tanno

This inventor holds 1 USPTO granted patent. Top assignee: Nippon Electric Co., Ltd.. Active years: 1987.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kohetsu Tanno. Retrieved from https://idiyas.com/inventor/kohetsu-tanno

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 37(Granted Patents)


Company Filing History:


Years Active: 1987

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1 patent (USPTO):Explore Patents

Title: Innovations of Kohetsu Tanno in Semiconductor Manufacturing

Introduction

Kohetsu Tanno is a notable inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor manufacturing. His innovative methods have paved the way for advancements in the technology sector.

Latest Patents

Tanno holds a patent for a method of manufacturing a semiconductor device. This patent describes a process of epitaxying layers on a semiconductor substrate through apertures in an insulating layer formed on the substrate. The layers are grown from the substrate and extend onto the insulating layer by reacting dichlorosilane, hydrogen chloride, and a carrier gas flow in a chamber under reduced pressure. This innovative method is crucial for the formation of semiconductor devices.

Career Highlights

Kohetsu Tanno is associated with Nippon Electric Co., Ltd., a leading company in the electronics industry. His work has been instrumental in enhancing the efficiency and effectiveness of semiconductor devices.

Collaborations

Tanno has collaborated with notable coworkers such as Yukinori Kurogi and Nobuhiro Endo. Their combined expertise has contributed to the success of various projects in the semiconductor field.

Conclusion

Kohetsu Tanno's contributions to semiconductor manufacturing through his innovative patent demonstrate his significant role in advancing technology. His work continues to influence the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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