Jerusalem, Israel

Kobi Oded

This inventor holds 1 USPTO granted patent and 1 published patent application and 1 EPO patent. Top assignee: Merck Patent Gmbh. Active years: 2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kobi Oded. Retrieved from https://idiyas.com/inventor/kobi-oded

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

% Patents Active = 100.0

 

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2022

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1 patent (USPTO):Explore Patents

Title: Kobi Oded - Innovator in Semiconducting Light Emitting Materials

Introduction

Kobi Oded is a notable inventor based in Jerusalem, Israel. He has made significant contributions to the field of semiconducting materials, particularly in the development of light emitting technologies. His innovative work has led to the creation of a unique semiconductor nano-sized light emitting material that incorporates a ligand.

Latest Patents

Kobi Oded holds 1 patent for his invention of a semiconducting light emitting material. This patent showcases his expertise in the field and highlights the potential applications of his work in various industries.

Career Highlights

Kobi is currently employed at Merck Patent GmbH, where he continues to advance his research and development efforts. His role at the company allows him to collaborate with other experts in the field and contribute to cutting-edge innovations.

Collaborations

Kobi has worked alongside talented colleagues such as Sanaa Khalil and Denis Glozman. Their combined efforts in research and development have further enhanced the impact of their work in the field of semiconducting materials.

Conclusion

Kobi Oded is a distinguished inventor whose work in semiconducting light emitting materials has the potential to influence various technological advancements. His contributions to the field are noteworthy and reflect his dedication to innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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